Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition

被引：71

作者：

Kim, H. S. ^{[1
]}

Lugo, F. ^{[1
]}

Pearton, S. J. ^{[1
]}

Norton, D. P. ^{[1
]}

Wang, Yu-Lin ^{[2
]}

Ren, F. ^{[2
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2900711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO-based light emitting diodes were fabricated on c-plane sapphire using ZnO:P/Zn0.9Mg0.1O/ZnO/Zn0.9Mg0.1O/ZnO:Ga p-i-n heterostructures. The p-i-n heterojunction diodes are rectifying and show light emission under forward bias. The electroluminescence spectra shows deep level emission at low bias, but near band edge ultraviolet emission at high voltage bias. A decrease in leakage currents in as-fabricated structures was achieved via low temperature oxygen annealing. (c) 2008 American Institute of Physics.

引用

页数：3

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