The structure and thermal behavior of Cu on ultrathin films of SiO2 on Si(111)

被引：31

作者：

Zhou, JB

Gustafsson, T

Garfunkel, E

机构：

[1] RUTGERS STATE UNIV,DEPT PHYS & ASTRON,PISCATAWAY,NJ 08855

[2] RUTGERS STATE UNIV,SURFACE MODIFICAT LAB,PISCATAWAY,NJ 08855

[3] RUTGERS STATE UNIV,DEPT CHEM,PISCATAWAY,NJ 08855

来源：

SURFACE SCIENCE | 1997年 / 372卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

copper; medium energy ion scattering (MEIS); nickel; silicon; silicon oxides;

D O I：

10.1016/S0039-6028(96)01100-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A study of the structure of thin Cu coatings on ultrathin SiO2 films grown on Si(111) is reported. Cu growth takes place in islands, and after annealing to 625 K or above, the Cu overlayer diffuses into the substrate. These results are similar to recently reported results for Ni overlayers. Unlike Ni, however, the Cu atoms occupy interstitial sites in the Si lattice.

引用

页码：21 / 27

页数：7

共 14 条

[1]

CAMPBELL IM, 1908, CATALYSIS SURFACES

[2]

FELDMAN L, 1982, MAT ANAL

[3] STRUCTURE AND MORPHOLOGY OF AU GROWN ON AG(110) [J].