Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

被引：3

作者：

Wang, S. Y. ^{[1
]}

Chang, C. A. ^{[1
]}

Chang, C. M. ^{[1
]}

Chen, S. H. ^{[1
]}

Ren, F. ^{[2
]}

Pearton, S. J. ^{[3
]}

Chyi, J. -I. ^{[1
,4
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 07期

关键词：

SURFACE RECOMBINATION; CURRENT GAIN; BASE;

D O I：

10.1063/1.4745208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The emitter size effect of a series InGaAsSb base series of InP/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) with different emitter sizes is investigated. Compared to the InGaAs base HBTs, these devices exhibit much lower base surface recombination current. This is attributed to the surface Fermi level pinning near the valence band of the antimonide base. The effect of Sb composition and doping concentration of the base on the surface recombination current is well explained by the postulate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745208]

引用

页数：4