Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors

被引：3
|
作者：
Wang, S. Y. [1 ]
Chang, C. A. [1 ]
Chang, C. M. [1 ]
Chen, S. H. [1 ]
Ren, F. [2 ]
Pearton, S. J. [3 ]
Chyi, J. -I. [1 ,4 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan
[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 07期
关键词：
SURFACE RECOMBINATION; CURRENT GAIN; BASE;
D O I：
10.1063/1.4745208
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The emitter size effect of a series InGaAsSb base series of InP/InGaAsSb/InGaAs heterojunction bipolar transistors (HBTs) with different emitter sizes is investigated. Compared to the InGaAs base HBTs, these devices exhibit much lower base surface recombination current. This is attributed to the surface Fermi level pinning near the valence band of the antimonide base. The effect of Sb composition and doping concentration of the base on the surface recombination current is well explained by the postulate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745208]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors
    Lo, C. F.
    Ren, F.
    Chang, C. Y.
    Pearton, S. J.
    Chen, S. -H.
    Chang, C. -M.
    Wang, S. -Y.
    Chyi, J. -I.
    Kravchenko, I. I.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03):
  • [2] InP/InGaAs heterojunction bipolar transistors with superlattice emitter structure
    Wang, WC
    Lin, KP
    Yu, KH
    Lin, KW
    Yen, CH
    Chiou, WH
    Wang, CK
    Liu, WC
    COMMAD 2000 PROCEEDINGS, 2000, : 234 - 237
  • [3] DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
    Chen, Shu-Han
    Chang, Chao-Min
    Chiang, Pei-Yi
    Wang, Sheng-Yu
    Chang, Wen-Hao
    Chyi, Jen-Inn
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3327 - 3332
  • [4] Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
    Liu, Min
    Zhang, Yuming
    Lu, Hongliang
    Zhang, Yimen
    Zhang, Jincan
    Ren, Xiaotang
    SOLID-STATE ELECTRONICS, 2015, 109 : 52 - 57
  • [5] Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors
    Tsai, Jung-Hui
    Huang, Chia-Hong
    Ma, Yung-Chun
    Wu, You-Ren
    SEMICONDUCTORS, 2012, 46 (12) : 1539 - 1544
  • [6] Comparative investigation of InP/InGaAs abrupt, setback, and heterostructure-emitter heterojunction bipolar transistors
    Jung-Hui Tsai
    Chia-Hong Huang
    Yung-Chun Ma
    You-Ren Wu
    Semiconductors, 2012, 46 : 1539 - 1544
  • [7] Low Surface Recombination in InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
    Wang, Sheng-Yu
    Chiang, Pei-Yi
    Chang, Chao-Min
    Chen, Shu-Han
    Chyi, Jen-Inn
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) : 1401 - 1403
  • [8] Investigation of InP/InGaAs/InP double heterojunction bipolar transistor
    13th Institute, China Electronic Technology Group Corporation, Shijiazhuang 050051, China
    不详
    Pan Tao Ti Hsueh Pao, 2007, SUPPL. (391-393):
  • [9] Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors
    Lin, Yu-Shyan
    Jou, Yu-Jeng
    Huang, Pin-Chun
    APPLIED PHYSICS LETTERS, 2009, 94 (06)
  • [10] An improved model for InP/InGaAs double heterojunction bipolar transistors
    Shi, Yuxia
    Jin, Zhi
    Su, Yongbo
    Cao, Yuxiong
    Wang, Yan
    SOLID-STATE ELECTRONICS, 2013, 81 : 163 - 169
12345