AlGaN/GaN MODFETs for high frequency and high power applications

被引：0

作者：

Leier, H ^{[1
]}

Vescan, A ^{[1
]}

Dietrich, R ^{[1
]}

Wieszt, A ^{[1
]}

Tobler, H ^{[1
]}

Van Hove, JM ^{[1
]}

Chow, PP ^{[1
]}

Wowchak, AM ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89081 Ulm, Germany

来源：

PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX) | 1999年 / 99卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the fabrication and performance of high quality MBE grown AlGaN/GaN MODFETs with different vertical and lateral layout. High frequency devices with gate-length of 0.4 mu m show cut-off frequencies of ft=25GHz and fmax=50GHz. The breakdown voltage as a function of gate-drain seperation has been measured for devices with carrier densities Ns of 3-6x10(12)cm(-2). For a gate-drain distance of 2.5 mu m we obtain breakdown voltages between 200V and 300V corresponding to a breakdown field of approximately 1MV/cm.

引用

页码：161 / 168

页数：8

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