AlGaN/GaN MODFETs for high frequency and high power applications

被引：0

作者：

Leier, H ^{[1
]}

Vescan, A ^{[1
]}

Dietrich, R ^{[1
]}

Wieszt, A ^{[1
]}

Tobler, H ^{[1
]}

Van Hove, JM ^{[1
]}

Chow, PP ^{[1
]}

Wowchak, AM ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89081 Ulm, Germany

来源：

PROCEEDINGS OF THE STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXX) | 1999年 / 99卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the fabrication and performance of high quality MBE grown AlGaN/GaN MODFETs with different vertical and lateral layout. High frequency devices with gate-length of 0.4 mu m show cut-off frequencies of ft=25GHz and fmax=50GHz. The breakdown voltage as a function of gate-drain seperation has been measured for devices with carrier densities Ns of 3-6x10(12)cm(-2). For a gate-drain distance of 2.5 mu m we obtain breakdown voltages between 200V and 300V corresponding to a breakdown field of approximately 1MV/cm.

引用

页码：161 / 168

页数：8

共 50 条

[21] Large-signal characteristics of AlGaN GaN power MODFETs
Alekseev, E
Pavlidis, D
Nguyen, NX
Nguyen, C
Grider, DE
1999 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 1999, : 533 - 536
[22] A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications
Kumar, J. S. Raj
Du John, H. Victor
Jebalin, I. V. Binola K.
Ajayan, J.
Delighta, A. Angelin
Nirmal, D.
MICROELECTRONICS JOURNAL, 2023, 140
[23] GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
Sun, Ruize
Lai, Jingxue
Chen, Wanjun
Zhang, Bo
IEEE ACCESS, 2020, 8 : 15529 - 15542
[24] GaN Power Integration for High Frequency and High Efficiency Power applications: a Review
Sun R.
Lai J.
Chen W.
Zhang B.
IEEE Access, 2020, 8 : 15529 - 15542
[25] Polarization dependent analysis of AlGaN/GaN HEMT for high power applications
Gangwani, Parvesh
Pandey, Sujata
HaIdar, Subhasis
Gupta, Mridula
Gupta, R. S.
SOLID-STATE ELECTRONICS, 2007, 51 (01) : 130 - 135
[26] High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
Zhang, Kai
Kong, Yuechan
Zhu, Guangrun
Zhou, Jianjun
Yu, Xinxin
Kong, Cen
Li, Zhonghui
Chen, Tangsheng
IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 615 - 618
[27] Enhancement mode GaN MOSFET for high power applications using AlGaN/GaN heterostructure
Chauhan, Sudakar Singh
Sunny, Arun
OPTIK, 2017, 135 : 298 - 304
[28] GaN Transistors for Power Switching and High Frequency Applications
Tsurumi, Naohiro
Uemoto, Yasuhiro
Sakai, Hiroyuki
Ueda, Tetsuzo
Tanaka, Tsuyoshi
Ueda, Daisuke
2008 IEEE CSIC SYMPOSIUM, 2008, : 202 - 206
[29] High-temperature very low frequency noise-based, investigation of slow transients in AlGaN/GaN MODFETs
Valizadeh, Pouya
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) : 265 - 271
[30] High frequency AlGaN/GaN MODFET's
Eastman, L
Chu, K
Schaff, W
Murphy, M
Weinmann, N
Eustis, T
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1997, 2 (17): : U3 - U7

← 1 2 3 4 5 →