Electrode-induced degradation of Pb(ZrxTi1-x)O-3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitors

被引：123

作者：

KushidaAbdelghafar, K

Miki, H

Torii, K

Fujisaki, Y

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.117956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One of the most serious forms of damage that occurs during the integration of Pt/PZT/Pt ferroelectric capacitors [where PZT is Pb(ZrxTi1-x)O-3] is the disappearance of polarization hysteresis characteristics during the passivation process. The hydrogen content of the atmosphere during this process affects the ferroelectric capacitor characteristics. However, the PZT film itself is not damaged by annealing in a hydrogen-containing atmosphere even at 400 degrees C, whereas the Pt/PZT/Pt ferroelectric capacitor loses its polarization hysteresis characteristics at 300 degrees C. The top Pt electrode was found to induce this damage. Possible mechanisms such as stress and a chemical reaction with the Pt catalyst are discussed. (C) 1996 American Institute of Physics.

引用

页码：3188 / 3190

页数：3

共 8 条

[1] BASE ELECTRODES FOR HIGH DIELECTRIC-CONSTANT OXIDE MATERIALS IN SILICON TECHNOLOGY [J].