Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

被引：16

作者：

Lo, C. F. ^{[1
]}

Liu, L. ^{[1
]}

Ren, F. ^{[1
]}

Kim, H. -Y. ^{[2
]}

Kim, J. ^{[2
]}

Pearton, S. J. ^{[3
]}

Laboutin, O. ^{[4
]}

Cao, Yu ^{[4
]}

Johnson, J. W. ^{[4
]}

Kravchenko, I. I. ^{[5
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Korea Univ, Dept Chem & Biol Engn, Seoul 136701, South Korea

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Kopin Corp, Taunton, MA 02780 USA

[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 06期

关键词：

aluminium compounds; contact resistance; gallium compounds; high electron mobility transistors; III-V semiconductors; indium compounds; proton effects; wide band gap semiconductors; PERFORMANCE; GAN;

D O I：

10.1116/1.3644480

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of proton irradiation on the dc characteristics of InAlN/GaN high electron mobility transistors were investigated. In this study we used 5 MeV protons with doses varying from 2 x 10(11) to 2 x 10(15) cm(-2). The transfer resistance and contact resistivity suffered more degradation as compared to the sheet resistance. With irradiation at the highest dose of 2 x 10(15) cm(-2), both forward- and reverse-bias gate currents were increased after proton irradiation. A negative threshold-shift and reduction of the saturation drain current were also observed as a result of radiation-induced carrier scattering and carrier removal. Devices irradiated with doses of 2 x 10(11) to 2 x 10(15) cm(-2) exhibited minimal degradation of the saturation drain current and extrinsic transconductance. These results show that InAlN/GaN high electron mobility transistors are attractive for space-based applications when high-energy proton fluxes are present. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3644480]

引用

页数：6

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