Reversible resistive switching behaviors in NiO nanowires

被引：85
作者：
Kim, Sung In [1 ]
Lee, Jae Hak [1 ]
Chang, Young Wook [1 ]
Hwang, Sung Sic [2 ]
Yoo, Kyung-Hwa [1 ,2 ]
机构：
[1] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[2] Yonsei Univ, Natl Core Res Ctr Nanomed Technol, Seoul 120749, South Korea
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期
关键词：
D O I：
10.1063/1.2958234
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated resistive switching phenomena in NiO nanowires fabricated using anodized aluminum oxide membranes. We show that NiO nanowires exhibit reversible and bistable resistive switching behaviors like those in NiO thin films. However, compared to NiO thin films, electroforming in NiO nanowires takes place at much lower electric fields. Thus, a 1-mu m-long NiO nanowire device operates under 2.5 V and even a 25-mu m-long NiO nanowire array operates under 20 V. These results suggest the possibility of developing nanowire-based resistance memory devices. (C) 2008 American Institute of Physics.
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