High peak power femtosecond pulses from modelocked semiconductor laser in external cavity

被引：18

作者：

Schlauch, T. ^{[1
]}

Li, M. ^{[1
]}

Hofmann, M. R. ^{[1
]}

Klehr, A. ^{[2
]}

Erbert, G. ^{[2
]}

Traenkle, G. ^{[2
]}

机构：

[1] Ruhr Univ Bochum, Lehrstuhl Photon & THz Technol, D-44780 Bochum, Germany

[2] Ferdinand Braun Inst Hochfrequenztech, D-12489 Berlin, Germany

来源：

ELECTRONICS LETTERS | 2008年 / 44卷 / 11期

关键词：

D O I：

10.1049/el:20080953

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The generation of high peak power femtosecond pulses from an all semiconductor laser system is demonstrated. The system is based on a passively modelocked two- section laser diode in an external cavity, a tapered amplifier and a compact external pulse compressor. Pulse durations are achieved below 600 fs with an average optical power above 500 mW at a repetition rate of 330 MHz. This corresponds to a peak power of 2.5 kW, which is the highest value reported for an all semiconductor ultrafast laser system so far.

引用

页码：678 / U30

页数：2

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