Barrier-layer scaling of InAlN/GaN HEMTs

被引：108

作者：

Medjdoub, F. ^{[1
]}

Alomari, M. ^{[1
]}

Carlin, J. -F. ^{[2
]}

Gonschorek, M. ^{[2
]}

Feltin, E. ^{[2
]}

Py, M. A. ^{[2
]}

Grandjean, N. ^{[2
]}

Kohn, E. ^{[1
]}

机构：

[1] Univ Ulm, Inst Electron Devices & Circuits, D-89081 Ulm, Germany

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 05期

关键词：

GaN based; high-electron mobility transistors (HEMTs); InAlN barrier; microwave devices; scaling;

D O I：

10.1109/LED.2008.919377

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the characteristics of In0.17Al0.83N/GaN high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at V-G = +2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000 degrees C).

引用

页码：422 / 425

页数：4

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