Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2 capacitors due to stress-induced crystallization at low budget

被引：262

作者：

Kim, Si Joon ^{[1
]}

Narayan, Dushyant ^{[1
]}

Lee, Jae-Gil ^{[1
]}

Mohan, Jaidah ^{[1
]}

Lee, Joy S. ^{[1
]}

Lee, Jaebeom ^{[1
]}

Kim, Harrison S. ^{[1
]}

Byun, Young-Chul ^{[1
]}

Lucero, Antonio T. ^{[1
]}

Young, Chadwin D. ^{[1
]}

Summerfelt, Scott R. ^{[2
]}

San, Tamer ^{[2
]}

Colombo, Luigi ^{[2
]}

Kim, Jiyoung ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, 800 West Campbell Rd, Richardson, TX 75080 USA

[2] Texas Instruments Inc, 13121 TI Blvd, Dallas, TX 75243 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 24期

关键词：

FILMS; ZRO2;

D O I：

10.1063/1.4995619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 mu C/cm(2)) and a low FE saturation voltage (similar to 1.5V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90nm. The TiN films are deposited at room temperature and annealed at 400 degrees C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures. Published by ALP Publishing.

引用

页数：5

共 26 条

[1]

[Anonymous], P 59 IEEE INT EL DEV

[2] Ferroelectricity in hafnium oxide thin films [J].

Boescke, T. S. ;

Mueller, J. ;

Braeuhaus, D. ;

Schroeder, U. ;

Boettger, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (10)

[3] Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films [J].

Chernikova, A. ;

Kozodaev, M. ;

Markeev, A. ;

Matveev, Yu. ;

Negrov, D. ;

Orlov, O. .

MICROELECTRONIC ENGINEERING, 2015, 147 :15-18

[4] Effects of internal stresses on the mechanical properties of deposition thin films [J].

Chuang, C. T. ;

Chao, C. K. ;

Chang, R. C. ;

Chu, K. Y. .

JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2008, 201 (1-3) :770-774

[5] Pathways towards ferroelectricity in hafnia [J].

Huan, Tran Doan ;

Sharma, Vinit ;

Rossetti, George A., Jr. ;

Ramprasad, Rampi .

PHYSICAL REVIEW B, 2014, 90 (06)

[6]

Kim S. J., STRESS INDUCED UNPUB

[7] High-permittivity perovskite thin films for dynamic random-access memories [J].

Kingon, AI ;

Streiffer, SK ;

Basceri, C ;

Summerfelt, SR .

MRS BULLETIN, 1996, 21 (07) :46-52

[8] Relative stability of ZrO2 and HfO2 structural phases [J].

Lowther, JE ;

Dewhurst, JK ;

Leger, JM ;

Haines, J .

PHYSICAL REVIEW B, 1999, 60 (21) :14485-14488

[9] The origin of ferroelectricity in Hf1-xZrxO2: A computational investigation and a surface energy model [J].

Materlik, R. ;

Kuenneth, C. ;

Kersch, A. .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (13)

[10] A 64-Mb embedded FRAM utilizing a 130-nm 5LM Cu/FSG logic process [J].

McAdams, HP ;

Acklin, R ;

Blake, T ;

Du, XH ;

Eliason, J ;

Fong, J ;

Kraus, WF ;

Liu, D ;

Madan, S ;

Moise, T ;

Natarajan, S ;

Qian, N ;

Qiu, YC ;

Remack, KA ;

Rodriguez, J ;

Roscher, J ;

Seshadri, A ;

Summerfelt, SR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (04) :667-677

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