Synthesis and characterization of ferroelectric thin films by KrF excimer laser ablation for memory applications

被引：2

作者：

Kumar, A ^{[1
]}

Alam, MR ^{[1
]}

机构：

[1] Univ S Alabama, Adv Thin Film Lab, Dept Elect Engn, Mobile, AL 36688 USA

来源：

ADVANCES IN LASER ABLATION OF MATERIALS | 1998年 / 526卷

关键词：

D O I：

10.1557/PROC-526-211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pb(ZrxTi1-x)O-3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSr1-xCoO3 (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.

引用

页码：211 / 217

页数：7