Structural, Optical and Sensing Behavior of Neodymium-Doped Vanadium Pentoxide Thin Films

被引:10
作者
Ali, Iftikhar M. [1 ]
Rzaij, Jamal M. [2 ]
Abbas, Qayes A. [3 ]
Ibrahim, Isam M. [1 ]
Alatta, Hassan J. [4 ]
机构
[1] Univ Baghdad, Coll Sci, Dept Phys, Baghdad, Iraq
[2] Univ Anbar, Coll Sci, Dept Phys, Ramadi, Iraq
[3] Univ Anbar, Coll Educ Pure Sci, Dept Phys, Ramadi, Iraq
[4] Univ Baghdad, Dept Sci Affaires, Baghdad, Iraq
来源
IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY TRANSACTION A-SCIENCE | 2018年 / 42卷 / A4期
关键词
Vanadium oxide; Structural properties; Electrical properties; Sensing behavior; GAS SENSORS; GROWTH;
D O I
10.1007/s40995-018-0553-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In this study, nanocrystals of vanadium pentoxide (V2O5) thin films were manufactured by chemical spray pyrolysis technique. A precursor solution of 0.05 M VCl5 was prepared using distilled water. Neodymium (Nd)-doped vanadium oxide films were fabricated, increasing the neodymium chloride by ratios of 0, 3, 5, 7 and 9% in separate solutions. These precursor solutions have been utilized to grow films of undoped V2O5 and doped with Nd on the p-type Si (111) porous silicon (PS) and glass substrates at temperatures of 250 degrees C. The structural, optical, electrical and gas sensing properties were studied. The analysis of the structural and optical properties of the thin films shows the effect of doping rates on the characteristics of vanadium oxide. The X-ray diffraction investigation resulted in a polycrystalline nature of the orthorhombic structure with the preferred direction of (010) with nano-grain sizes. Atomic force microscopy (AFM) was used to characterize the morphological properties of the films. Undoped V2O5 and doped V2O5 with various concentrations of Nd films directly allowed the transition of the band gap. The sensitivity of NO2 and H-2 gases for various doping ratios of Nd at different operating temperatures was measured.
引用
收藏
页码:2375 / 2386
页数:12
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