Effect of Bi2O3 Doping on the Sintering Temperature and Microwave Dielectric Properties of LiAlSiO4 Ceramics

被引：26

作者：

Jeong, Byoung-Jik ^{[1
]}

Joung, Mi-Ri ^{[1
]}

Kweon, Sang-Hyo ^{[1
]}

Kim, Jin-Seong ^{[1
]}

Nahm, Sahn ^{[1
]}

Choi, Ji-Won ^{[2
]}

Hwang, Seong-Ju ^{[3
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] KIST, Ctr Elect Mat, Seoul 137791, South Korea

[3] Ewha Womans Univ, Dept Chem & Nano Sci, Ctr Intelligent Nanobio Mat, Seoul 120750, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2012年 / 95卷 / 06期

关键词：

BETA-EUCRYPTITE; THERMAL-EXPANSION;

D O I：

10.1111/j.1551-2916.2012.05222.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

When Bi2O3 was added to LiAlSiO4 ceramics, Bi12SiO20 secondary phase was formed. Since the melting temperature of Bi12SiO20 ceramics is 880 degrees C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO4 ceramics. When 15.0 mol% Bi2O3 was added, the LiAlSiO4 ceramics could be sintered at 900 degrees C, and with 20.0 mol% Bi2O3 they could even be sintered at 875 degrees C. The 15.0 mol% Bi2O3-doped LiAlSiO4 ceramics sintered at 900 degrees C exhibited good microwave dielectric properties, namely, a low er of 4.3, a high Q x f of 62 430 GHz and a small tau(f) of -16.21 ppm/degrees C.

引用

页码：1811 / 1813

页数：3

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