TEM characterization of M-plane InN grown on (100) LiAlO2 substrate by RF-MBE

被引：1

作者：

Nozawa, Hirokazu ^{[1
]}

Takagi, Yusuke ^{[1
]}

Harui, Satoshi ^{[1
]}

Muto, Daisuke ^{[1
]}

Yamaguchi, Tomohiro ^{[2
]}

Araki, Tsutomu ^{[1
]}

Nanishi, Yasushi ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, 1-1-1 Noji Higashi, Shiga 5258577, Japan

[2] Ritsumeiken Univ, Res Org Sci & Engn, Kusatsu, Shiga 5258577, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

VAPOR-PHASE EPITAXY; ECR-MBE; CUBIC INN; SAPPHIRE; GAN; MICROSTRUCTURE;

D O I：

10.1002/pssc.200880982

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we characterized the microstructure of M-plane InN using transmission electron microscopy (TEM). The M-plane InN was grown on a (100) LiAlO2 substrate using radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). We determined the epitaxial relationships of the M-plane InN and LiAlO2 using selected area electron diffraction (SAED). The epitaxial relationships were exactly the same as the M-plane GaN grown on the same substrate. Also, the M-plane InN was grown on the (100) LiAlO2 despite the high lattice mismatches between M-plane InN and LiAlO2. We observed a high density of stacking faults parallel to (0001) InN. The density was estimated about 1.8 x 10(6) cm(-1), which was one order of magnitude higher than that of non-polar GaN. The correlation between threading dislocations and stacking faults is investigated. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S429 / S432

页数：4

共 16 条

[1] TEM characterization of InN films grown by RF-MBE [J].

Araki, T ;

Ueta, S ;

Mizuo, K ;

Yamaguchi, T ;

Saito, Y ;

Nanishi, Y .

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07) :2798-2801

[2] Growth of cubic InN on r-plane sapphire [J].

Cimalla, V ;

Pezoldt, J ;

Ecke, G ;

Kosiba, R ;

Ambacher, O ;

Spiess, L ;

Teichert, G ;

Lu, H ;

Schaff, WJ .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3468-3470

[3] Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy [J].

Haskell, BA ;

Chakraborty, A ;

Wu, F ;

Sasano, H ;

Fini, PT ;

Denbaars, SP ;

Speck, JS ;

Nakamura, S .

JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) :357-360

[4] Structural and morphological characteristics of planar (11(2)over-bar0) a-plane gallium nitride grown by hydride vapor phase epitaxy [J].

Haskell, BA ;

Wu, F ;

Matsuda, S ;

Craven, MD ;

Fini, PT ;

DenBaars, SP ;

Speck, JS ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2003, 83 (08) :1554-1556

[5]

HASKELL BA, 2003, APPL PHYS LETT, V83, P8

[6] A-plane (1120) InN growth on nitridated R-plane (1012) sapphire by ECR-MBE [J].

Kumagai, Y. ;

Tsuyuguchi, A. ;

Naoi, H. ;

Araki, T. ;

Na, H. ;

Nanishi, Y. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07) :1468-1471

[7] Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy [J].

Lu, H ;

Schaff, WJ ;

Eastman, LF ;

Wu, J ;

Walukiewicz, W ;

Cimalla, V ;

Ambacher, O .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1136-1138

[8] Growth of A-plane (11-20) in-rich InGaN on R-plane (10-12) sapphire by RF-MBE [J].

Noda, M. ;

Kumagai, Y. ;

Takado, S. ;

Muto, D. ;

Na, H. ;

Naoi, H. ;

Araki, T. ;

Nanishi, Y. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07) :2560-+

[9] Origins of Fermi-level pinning on GaN and InN polar and nonpolar surfaces [J].

Segev, D. ;

Van de Walle, C. G. .

EUROPHYSICS LETTERS, 2006, 76 (02) :305-311

[10] RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer [J].

Shikata, G. ;

Hirano, S. ;

Inoue, T. ;

Orihara, M. ;

Hijikata, Y. ;

Yaguchi, H. ;

Yoshida, S. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 (517-520) :517-520

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