III-Nitride semiconductors for intersubband devices

被引：0
|
作者：
Kotsar, Y. [1 ]
Machhadani, H. [2 ]
Sakr, S. [2 ]
Kandaswamy, P. K. [1 ]
Tchernycheva, M. [2 ]
Bellet-Amalric, E. [1 ]
Julien, F. H. [2 ]
Monroy, E. [1 ]
机构：
[1] CEA, CEA CNRS Grp Nanophys & Semicond, INAC NPSC SP2M, 17 Rue Martyrs, F-38054 Grenoble 9, France
[2] Univ Paris Sud, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France
来源：
QUANTUM SENSING AND NANOPHOTONIC DEVICES VIII | 2011年 / 7945卷
关键词：
Nitrides; intersubband; infrared; quantum well; superlattices; ALL-OPTICAL SWITCH; QUANTUM;
D O I：
10.1117/12.872893
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Extending the intersubband transitions in III-nitride nanostructures from near-infrared to longer wavelengths might have significant consequences for critical applications like imaging, remote sensing and mine detection. In this work, we analyze the potential of polar AlGaN/GaN heterostructures for this relevant spectral range.
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页数：7
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