Band alignment of ZnO/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy

被引：17

作者：

Liu, Xinke ^{[1
]}

Zhang, Yuan ^{[2
]}

Liu, Qiang ^{[3
]}

He, Jiazhu ^{[1
]}

Chen, Le ^{[1
]}

Li, Kuilong ^{[1
]}

Jia, Fang ^{[1
]}

Zeng, Yuxiang ^{[1
]}

Lu, Youming ^{[1
]}

Yu, Wenjie ^{[3
]}

Zhu, Deliang ^{[1
]}

Liu, Wenjun ^{[1
]}

Wu, Jing ^{[4
]}

He, Zhubing ^{[5
]}

Ang, Kah-Wee ^{[6
]}

机构：

[1] Shenzhen Univ, Nanshan Dist Key Lab Biopolymer & Safety Evaluat, Coll Mat Sci & Engn, 3688 Nanhai Ave, Shenzhen 518060, Peoples R China

[2] Hua Bei Normal Univ, Sch Phys & Elect Informat, 100 Dongshan Rd, Huai Bei 235000, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Chang Ning Rd, Shanghai 200050, Peoples R China

[4] Inst Mat Res & Engn, 2 Fusionopolis Way,Innovis 08-03, Singapore 138634, Singapore

[5] South Univ Sci & Technol China, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Peoples R China

[6] Natl Univ Singapore, Dept Elect & Comp Engn, 4 Engn Dr 3, Singapore 117583, Singapore

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 07期

基金：

中国国家自然科学基金;

关键词：

ZNO; HETEROJUNCTION; PHOTOEMISSION; ENHANCEMENT; TRANSISTORS; SENSOR;

D O I：

10.1063/1.4961441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy band alignment between ZnO and multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS2 was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS2 interface without any treatment. With CHF3 plasma treatment, a VBO and a CBO across the ZnO/ML-MoS2 interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF3 plasma treatment, the band alignment of the ZnO/ML-MoS2 interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F. Published by AIP Publishing.

引用

页数：5

共 30 条

[1] Internal photoemission of electrons and holes from (100)Si into HfO2 [J].