Cross-sectional electrostatic force microscopy of semiconductor laser diodes

被引：6
|
作者：
Ankudinov, AV [1 ]
Kotel'nikov, EY [1 ]
Kantsel'son, AA [1 ]
Evtikhiev, VP [1 ]
Titkov, AN [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2001年 / 35卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1385722
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The possibilities of electrostatic force microscopy in studying semiconductor device structures are considered. A study of the cross sections of a GaAlAs/GaAs laser diode demonstrated that the method yields the position and width of the n-p junction in the laser structure, the profile of the voltage drop across the layers constituting the structure, and the distribution of injected carriers in the waveguide. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：840 / 846
页数：7
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