Advanced HSPICE macromodel for magnetic tunnel junction

被引：34

作者：

Lee, S

Shin, H

Kim, D

机构：

[1] Ewha Womans Univ, Dept Informat Elect Engn, Seoul 120750, South Korea

[2] Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4B期

关键词：

macromodel; MTJ; MRAM; hysteresis; asteroid curve; R-V characteristics;

D O I：

10.1143/JJAP.44.2696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R-V characteristics.

引用

页码：2696 / 2700

页数：5

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