Rectifying current-voltage characteristics of BiFeO3/Nb-doped SrTiO3 heterojunction

被引：172

作者：

Yang, H. ^{[1
]}

Luo, H. M. ^{[1
]}

Wang, H. ^{[2
]}

Usov, I. O. ^{[1
]}

Suvorova, N. A. ^{[1
]}

Jain, M. ^{[1
]}

Feldmann, D. M. ^{[1
]}

Dowden, P. C. ^{[1
]}

DePaula, R. F. ^{[1
]}

Jia, Q. X. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Mat Phys & Applicat Div, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2896302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on (001) Nb-doped SrTiO3 (Nb-STO) substrates by pulsed laser deposition. Introducing Bi vacancies caused the BFO thin film to evolve to a p-type semiconductor and formed a p-n heterojunction with an n-type semiconductor Nb-STO. The current density versus voltage (J-V) and capacitance versus voltage (C-V) characteristics of the heterojunction were investigated. A typical rectifying J-V effect was observed with a large rectifying ratio of 5x10(4). Reverse C-V characteristics exhibited a linear 1/C-2 versus V plot, from which a built-in potential of 0.6 V was deduced. The results show a potential application of BFO/Nb-STO heterojunction for oxide electronics. (c) 2008 American Institute of Physics.

引用

页数：3

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