Gain-Enhanced Distributed Amplifier Using Negative Capacitance

被引：46

作者：

Ghadiri, Aliakbar ^{[1
]}

Moez, Kambiz ^{[1
]}

机构：

[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB 26G 2V4, Canada

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2010年 / 57卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

CMOS distributed amplifier; gain boosting technique; negative capacitance; negative resistance; wideband amplifier; CMOS RF; DESIGN; CIRCUITS; IMPACT;

D O I：

10.1109/TCSI.2010.2055610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new high-gain structure for the distributed amplifier. Negative capacitance cells are exploited to ameliorate the loading effects of parasitic capacitors of gain cells in order to improve the gain of the distributed amplifier while keeping the desired bandwidth. In addition, the negative capacitance circuit creates a negative resistance that can be used to increase the amplifier bandwidth. Implemented in 0.13-mu m IBM's CMRF8SF CMOS, the proposed six-stage distributed amplifier presents an average gain of 13.2 dB over a bandwidth of 29.4 GHz. The measured input return loss is less than -9 dB and the output return loss is less than -9.5 dB over the entire bandwidth. With a chip area of 1.5 mm x 0.8 mm, the amplifier consumes 136 mW from a 1.5-V dc power supply.

引用

页码：2834 / 2843

页数：10

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