Ordered quantum dots formation on engineered template by molecular beam epitaxy

被引：4

作者：

Suraprapapich, S ^{[1
]}

Kanjanachuchai, S ^{[1
]}

Thainoi, S ^{[1
]}

Panyakeow, S ^{[1
]}

机构：

[1] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab, Bangkok 10330, Thailand

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 78-79卷

关键词：

ordered InAs quantum dots; engineered template; molecular beam epitaxy;

D O I：

10.1016/j.mee.2004.12.046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have achieved partial ordering of InAs quantum dots (QDs) grown on a flat GaAs (0 0 1) substrate. Although the growth of the first QD layer results in random distribution of QDs, subsequent processes that involve multiple cycles of capping, regrowth and annealing have turned the flat substrate into a template with stripes in the [1 1 0] direction. Regrowth on the engineered template results in chains of relatively uniform InAs QDs connected in series. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：349 / 352

页数：4

共 10 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[2] GAIN AND THE THRESHOLD OF 3-DIMENSIONAL QUANTUM-BOX LASERS [J].

ASADA, M ;

MIYAMOTO, Y ;

SUEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1915-1921

[3] Intermixing and shape changes during the formation of InAs self-assembled quantum dots [J].

García, JM ;

MedeirosRibeiro, G ;

Schmidt, K ;

Ngo, T ;

Feng, JL ;

Lorke, A ;

Kotthaus, J ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 1997, 71 (14) :2014-2016

[4] InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy [J].

Kiravittaya, S ;

Songmuang, R ;

Changmuang, P ;

Sopitpan, S ;

Ratanathammaphan, S ;

Sawadsaringkarn, M ;

Panyakeow, S .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :1010-1015

[5] Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (001) GaAs substrates [J].

Nakamura, Y ;

Schmidt, OG ;

Jin-Phillipp, NY ;

Kiravittaya, S ;

Müller, C ;

Eberl, K ;

Gräbeldinger, H ;

Schweizer, H .

JOURNAL OF CRYSTAL GROWTH, 2002, 242 (3-4) :339-344

[6] MBE of quantum wires and quantum dots [J].

Nötzel, R ;

Ploog, KH .

JOURNAL OF CRYSTAL GROWTH, 2001, 227 :8-12

[7] Self-aggregation of InAs quantum dots on (N11) GaAs substrates [J].

Sanguinetti, S ;

Fortina, SC ;

Miotto, A ;

Grilli, E ;

Guzzi, M ;

Henini, M ;

Polimeni, A ;

Eaves, L .

THIN SOLID FILMS, 1998, 336 (1-2) :9-12

[8] In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode [J].

Seifert, W ;

Carlsson, N ;

Miller, M ;

Pistol, ME ;

Samuelson, L ;

Wallenberg, LR .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1996, 33 (04) :423-471

[9] Formation of lateral quantum dot molecules around self-assembled nanoholes [J].

Songmuang, R ;

Kiravittaya, S ;

Schmidt, OG .

APPLIED PHYSICS LETTERS, 2003, 82 (17) :2892-2894

[10] Mature InAs quantum dots on the GaAs(114)A surface [J].

Xu, MC ;

Temko, Y ;

Suzuki, T ;

Jacobi, K .

APPLIED PHYSICS LETTERS, 2004, 84 (13) :2283-2285

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