Formation of high-density quantum dot arrays by molecular beam epitaxy

被引：32

作者：

Kawabe, M ^{[1
]}

Chun, YJ ^{[1
]}

Nakajima, S ^{[1
]}

Akahane, K ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6B期

关键词：

quantum dot; quantum dot array; self-organization; molecular beam epitaxy; atomic hydrogen;

D O I：

10.1143/JJAP.36.4078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface modification by atomic hydrogen homogenizes the distribution and reduces the size of self-organized quantum dots (QDs) grown hy molecular beam epitaxy (MBE) and also improves their photoluminescence intensity. Quantum dot arrays of InGaAs are obtained on GaAs(311)B by conventional MBE. The size and the density are approximately 30 nm and 7 x 10(10)/cm(2). The ordered structure of QDs shows strong dependence on the In content, and the arrays of the QDs begin to become disordered as the In content increases to more than 0.6. The formation of the dot array is induced by wavy surface instability. The dot array on GaAs(311)B is metastable and disordered upon thermal annealing.

引用

页码：4078 / 4083

页数：6

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