First environmental data from the EUV engineering test stand

被引:32
作者
Klebanoff, LE [1 ]
Malinowski, ME [1 ]
Grunow, P [1 ]
Clift, WM [1 ]
Steinhaus, C [1 ]
Leung, AH [1 ]
Haney, SJ [1 ]
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES V | 2001年 / 4343卷
关键词
contamination; oxidation; EUV; lithography;
D O I
10.1117/12.436676
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The first environmental data from the Engineering Test Stand (ETS) has been collected. Excellent control of high-mass hydrocarbons has been observed. This control is a result of extensive outgas testing of components and materials, vacuum compatible design of the ETS, careful cleaning of parts and pre-baking of cables and sub assemblies where possible, and clean assembly procedures. As a result of the hydrocarbon control, the residual ETS vacuum environment is rich in water vapor. Analysis of witness plate data indicates that the ETS environment does not pose a contamination risk to the optics in the absence of EUV irradiation. However, with EUV exposure, the water rich environment can lead to EUV-induced water oxidation of the Si-terminated Mo/Si optics. Added ethanol can prevent optic oxidation, allowing carbon growth via EUV "cracking" of low-level residual hydrocarbons to occur. The EUV environmental issues are understood, mitigation approaches have been validated, and EUV optic contamination appears to be manageable.
引用
收藏
页码:342 / 346
页数:5
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