Atmospheric-pressure epitaxial growth technique of a multiple quantum well by mist chemical vapor deposition based on Leidenfrost droplets

被引:19
作者
Kawaharamura, Toshiyuki [1 ,2 ]
Dang, Giang T. [1 ,3 ]
Nitta, Noriko [1 ,4 ]
机构
[1] Kochi Univ Technol, Res Inst, Ctr Nanotechnol, 185 Miyanokuchi, Kochi 7828502, Japan
[2] Kochi Univ Technol, Sch Syst Engn, 185 Miyanokuchi, Kochi 7828502, Japan
[3] Vietnam Acad Sci & Technol, Inst Phys, 10 Dao Tan, Hanoi 118011, Vietnam
[4] Kochi Univ Technol, Sch Environm Sci & Engn, 185 Miyanokuchi, Kochi 7828502, Japan
关键词
MIGRATION-ENHANCED EPITAXY; MOLECULAR-BEAM EPITAXY; LOW-TEMPERATURE; SURFACTANT; OXIDE; BI; FILMS; GAAS;
D O I
10.1063/1.4964647
中图分类号
O59 [应用物理学];
学科分类号
摘要
A multiple quantum well alpha-Fe2O3/alpha-Ga2O3 with parallel and coherent formation of uniform and highly single-crystalline layers on a sapphire substrate has been fabricated by open-air atmospheric-pressure solution-processed mist chemical vapor deposition (Mist CVD). This report demonstrates that complicated structures with atomic-level control can be fabricated even in non-vacuum conditions by the Mist CVD. This can be achieved via the precise control of the precursor flow and ambient temperature combined with the formation of mist droplets of the special Leidenfrost state, which increased the atomic migration length by 10(8) times more than that of traditional vacuum techniques. This work could be a milestone in the transformation from vacuum to non-vacuum thin film deposition techniques towards a green and sustainable industry. Published by AIP Publishing.
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页数:5
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