Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

被引：2

作者：

Taher, H. ^{[1
,2
]}

机构：

[1] Umm Alqura Univ, Fac Engn & Islamic Architecture, Dept Elect Engn, Mecca, Saudi Arabia

[2] Elect Res Inst, Giza, Egypt

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2012年 / 54卷 / 03期

关键词：

small signal model; Si/SiGe heterojunction bipolar transistor; direct extraction; S-parameters; PARAMETER EXTRACTION; HBT-MODEL;

D O I：

10.1002/mop.26635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A developed direct extraction technique of small-signal p-topology Small signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented.The intrinsic model parameters are analytically extracted. The extraction procedure is performed using new set of exact equations that do not need numerical fitting, special polarization of the device or any kind of post processing. Flat frequency response of the extracted parameters is obtained. Excellent agreement is noticed between S-parameters measurements and its simulated counterpart using the extracted model in the frequency range from 40 MHz to 20 GHz at different bias conditions. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:584-589, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26635

引用

页码：584 / 589

页数：6

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