Silicon nanowires and their application in bi-directional electron pumps

Multiple tunnel junctions formed along 2 x 10(19) cm(-3) phosphorus-doped silicon nanowires of different length were realised in silicon-on-insulator material. The electrical characteristics of these Coulomb blockade devices indicate that the gate voltages provide better control of the transport through the tunnel barriers if their wire length is reduced. This results in more distinct Coulomb blockade oscillations which are needed for the successful operation of bi-directional electron pumps consisting of two short nanowires separated by one macroscopic main island to which an rf signal is applied. (C) 2001 Elsevier Science B.V. All rights reserved.