Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN

被引：21
作者：
Dahal, R. [1 ]
Ugolini, C. [1 ]
Lin, J. Y. [2 ,3 ]
Jiang, H. X. [2 ,3 ]
Zavada, J. M. [4 ]
机构：
[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA
[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA
[3] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
[4] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期
关键词：
D O I：
10.1063/1.2955834
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-injected 1.54 mu m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 mu m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers. (C) 2008 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 15 条
[1]  
[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0
[2]   1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].
ENNEN, H ;
SCHNEIDER, J ;
POMRENKE, G ;
AXMANN, A .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945
[3]   LUMINESCENCE OF ERBIUM IMPLANTED IN VARIOUS SEMICONDUCTORS - IV-MATERIALS, III-V-MATERIALS AND II-VI MATERIALS [J].
FAVENNEC, PN ;
LHARIDON, H ;
SALVI, M ;
MOUTONNET, D ;
LEGUILLOU, Y .
ELECTRONICS LETTERS, 1989, 25 (11) :718-719
[4]  
Hommerich U, 1998, ELEC SOC S, V98, P110
[5]   Erbium doped optical-waveguide amplifiers on silicon [J].
Kik, PG ;
Polman, A .
MRS BULLETIN, 1998, 23 (04) :48-54
[6]   Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping [J].
Kim, S ;
Rhee, SJ ;
Li, X ;
Coleman, JJ ;
Bishop, SG .
APPLIED PHYSICS LETTERS, 2000, 76 (17) :2403-2405
[7]   Excitation paths in RE-doped III-V semiconductors [J].
Klik, MAJ ;
Izeddin, I ;
Phillips, J ;
Gregorkiewicz, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3) :141-145
[8]   Rare earth doped III-nitrides for optoelectronics [J].
O'Donnell, K. P. ;
Hourahine, B. .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2006, 36 (02) :91-103
[9]  
Seo JT, 2000, J KOREAN PHYS SOC, V36, P311
[10]   Optoelectronic properties and applications of rare-earth-doped GaN [J].
Steckl, AJ ;
Zavada, JM .
MRS BULLETIN, 1999, 24 (09) :33-38
12