Properties of Cu-doped low resistive ZnSe films deposited by two-sourced evaporation

被引：32

作者：

Ali, Z ^{[1
]}

Aqili, AKS

Maqsood, A

Akhtar, SMJ

机构：

[1] Quaid I Azam Univ, Dept Phys, Thermal Phys Lab, Islamabad 45320, Pakistan

[2] Hashemite Univ, Dept Phys, Zarka, Jordan

[3] Opt Labs, Islamabad, Pakistan

来源：

VACUUM | 2005年 / 80卷 / 04期

关键词：

thermal coating; ZnSe thin films; optical; electrical;

D O I：

10.1016/j.vacuum.2005.06.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-sourced evaporation technique is used to prepare hard ZnSe films by controlling the evaporation rates of both Zn and Se at substrate temperature of 400 degrees C. The films are doped with Cu by immersion in the Cu(NO3)(2)-H2O solution for different periods of time. The XRD has not shown a drastic change in the film structure while the electrical resistivity of the deposited film dropped from 10(9) Omega-cm to about 1.6 Omega-cm for solution immersed films after heat treatment. Optical properties of deposited and doped films, such as film thickness, absorption coefficient and optical band gap have been calculated from the normal transmission spectra in the range of 300-2200 nm. The optical results show a decrease of the transmission and an increase of the refractive index and a slight shift in the optical band gap. Chemical composition of the Cu is determined by using absorption of immersed films. The composition of Cu is also compared with the composition detected by electron microprobe analyzer (EMPA). (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：302 / 309

页数：8

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