Method for predicting junction temperature distribution in a high-power laser diode bar

被引:18
作者
Kim, Dae-Suk [1 ]
Holloway, Caleb [1 ]
Han, Bongtae [1 ]
Bar-Cohen, Avram [1 ]
机构
[1] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
关键词
THERMAL-PROPERTIES; TRANSIENT; RELIABILITY; TECHNOLOGY; DEPENDENCE; DEFENSE; GAAS;
D O I
10.1364/AO.55.007487
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A hybrid experimental/numerical method is proposed for predicting the junction temperature distribution in a high-power laser diode (LD) bar with multiple emitters. A commercial water-cooled LD bar with multiple emitters is used to illustrate and validate the proposed method. A unique experimental setup is developed and implemented first to measure the average junction temperatures of the LD bar emitters. After measuring the heat dissipation of the LD bar, the effective heat transfer coefficient of the cooling system is determined inversely from the numerical simulation using the measured average junction temperature and the heat dissipation. The characterized heat dissipation and effective heat transfer coefficient are used to predict the junction temperature distribution over the LD bar numerically under high operating currents. The results are presented in conjunction with the wall-plug efficiency and the center wavelength shift. (C) 2016 Optical Society of America
引用
收藏
页码:7487 / 7496
页数:10
相关论文
共 51 条
[1]  
[Anonymous], 2010, JESD51-14, P46
[2]   Goals and status of the German national research initiative BRIOLAS (brilliant diode lasers) [J].
Bachmann, Friedrich .
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V, 2007, 6456
[3]  
Bird J., 2010, Electrical Circuit Theory and Technology
[4]  
BOULNOIS J-L, 1986, Lasers in Medical Science, V1, P47, DOI 10.1007/BF02030737
[5]   THERMAL CONDUCTIVITY OF GAAS AND GAAS1-XPX LASER SEMICONDUCTORS [J].
CARLSON, RO ;
SLACK, GA ;
SILVERMAN, SJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :505-+
[6]   Junction temperature in light-emitting diodes assessed by different methods [J].
Chhajed, S ;
Xi, Y ;
Gessmann, T ;
Xi, JQ ;
Shah, JM ;
Kim, JK ;
Schubert, EF .
LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS IX, 2005, 5739 :16-24
[7]  
Crump P. A., 2006, C LAS EL QUANT EL LA
[8]   Experimental investigations on the offset correction of transient cooling curves of light emitting diodes based on JESD51-14 and simple semi-empirical approximations [J].
Daiminger, Franz ;
Gruber, Martin ;
Dendorfer, Christian ;
Zahner, Thomas .
MICROELECTRONICS JOURNAL, 2015, 46 (12) :1208-1215
[9]   Reliable high-power long-pulse 8XX-nm diode laser bars and arrays operating at high temperature [J].
Fan, Li ;
Cao, Chuanshun ;
Thaler, Gerald ;
Nonnemacher, Dustin ;
Lapinski, Feliks ;
Ai, Irene ;
Caliva, Brian ;
Das, Suhit ;
Walker, Robert ;
Zeng, Linfei ;
McElhinney, Mark ;
Thiagarajan, Prabhu .
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS IX, 2011, 7918
[10]   Next-generation microchannel coolers - art. no. 687608 [J].
Feeler, Ryan ;
Junghans, Jeremy ;
Kemner, Greg ;
Stephens, Ed .
HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VI, 2008, 6876 :87608-87608