3-D numerical modeling and simulation of nanoscale FinFET for the application in ULSI circuits

被引：0

作者：

Ramesh, R. ^{[1
]}

Madheswaran, M. ^{[2
]}

Kannan, K. ^{[3
]}

机构：

[1] MAM Coll Engn, Dept Elect & Commun Engn, Tiruchirappalli 621105, Tamil Nadu, India

[2] Muthayammal Engn Coll, Ctr Adv Res, Rasipuram, Tamil Nadu, India

[3] SASTRA Univ, Dept Math, Thanjavur, Tamil Nadu, India

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2011年 / 44卷 / 01期

关键词：

SCALING THEORY; SI MOSFETS; P-CHANNEL; SOI; LIMITS;

D O I：

10.1016/j.physe.2011.07.010

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A complete three-dimensional numerical modeling of nanoscale FinFET including quantum-mechanical effects for the application in future ULSI circuits has been developed. The exact potential profile in the channel has been computed by obtaining a self-consistent solution of 3D Poisson-Schrodinger equation using Leibmann's iteration method. The threshold voltage shift, drain and transfer characteristics have been estimated and the results were compared with the device simulator and experimental results. The model is purely a physics based one and overcomes the major limitations of the existing 2D/3D analytical models by providing a more accurate result and this model is validated by comparing with the existing results as well as the experimental results. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：80 / 86

页数：7

共 30 条

[1]

[Anonymous], THESIS PURDUE U

[2] An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs [J].

Ben Abdallah, N. ;

Mouis, M. ;

Negulescu, C. .

JOURNAL OF COMPUTATIONAL PHYSICS, 2007, 225 (01) :74-99

[3] Multiscale simulation of transport in an open quantum system: Resonances and WKB interpolation [J].

Ben Abdallah, N ;

Pinaud, O .

JOURNAL OF COMPUTATIONAL PHYSICS, 2006, 213 (01) :288-310

[4] Multiple-gate SOI MOSFETs [J].

Colinge, JP .

SOLID-STATE ELECTRONICS, 2004, 48 (06) :897-905

[5] A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs [J].

El Hamid, Hamdy Abd ;

Guitart, Jaume Roig ;

Kilchytska, Valeria ;

Flandre, Denis ;

Iniguez, Benjamin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) :2487-2496

[6]

Frank D. J., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P553, DOI 10.1109/IEDM.1992.307422

[7] Device scaling limits of Si MOSFETs and their application dependencies [J].

Frank, DJ ;

Dennard, RH ;

Nowak, E ;

Solomon, PM ;

Taur, Y ;

Wong, HSP .

PROCEEDINGS OF THE IEEE, 2001, 89 (03) :259-288

[8] IIA-7 MONTE-CARLO SIMULATIONS OF P-CHANNEL AND N-CHANNEL DUAL-GATE SI MOSFETS AT THE LIMITS OF SCALING [J].

FRANK, DJ ;

LAUX, SE ;

FISCHETTI, MV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) :2103-2103

[9]

Fried D. M., 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561), P24, DOI 10.1109/DRC.2001.937857

[10] Subthreshold current model of FinFETs based on analytical solution of 3-D Poisson's equation [J].

Havaldar, DS ;

Katti, G ;

DasGupta, N ;

DasGupta, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) :737-742

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