25-GHz ultra-low phase noise InGa-P/GaAs HBT VCO

被引:33
|
作者
Bao, MQ [1 ]
Li, YG [1 ]
Jacobsson, H [1 ]
机构
[1] Ericsson AB, Ericsson Res, Microwave & High Speed Elect Res Ctr, SE-43184 Molndal, Sweden
关键词
InGaPIGaAs heterojunction bipolar transistor (HBT); phase noise; voltage controlled oscillator (VCO);
D O I
10.1109/LMWC.2005.858983
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 25-GHz monolithic voltage controlled oscillator (VCO) has been designed and fabricated in a commercial InGaP/GaAs heterojunction bipolar transistor (HBT) process. This balanced VCO has a novel topology using a feedback pi-network and a common-emitter transistor configuration. Ultra-low phase noise is achieved: -106 dBc/Hz and -130 dBc/Hz at 100 kHz and 1-MHz offset frequency, respectively. To the authors' knowledge, this is the lowest phase noise achieved in a monolithic microwave integrated circuit (MMIC) VCO at such high frequency. The single-ended output power is -1 dBm. It can be tuned between 25.33 GHz and 25.75 GHz using the base-collector junction capacitor of the HBT as a varactor. The dc power consumption is 90 mW for a 9-V supply. An excellent figure-of-merit of -195 dBc/Hz is obtained.
引用
收藏
页码:751 / 753
页数:3
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