Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

被引：67

作者：

Russo-Averchi, Eleonora ^{[1
]}

Heiss, Martin ^{[1
]}

Michelet, Lionel ^{[1
]}

Krogstrup, Peter ^{[2
]}

Nygard, Jesper ^{[2
]}

Magen, Cesar ^{[3
,4
]}

Morante, Joan Ramon ^{[5
,6
]}

Uccelli, Emanuele ^{[1
]}

Arbiol, Jordi ^{[7
,8
]}

Fontcuberta i Morral, A. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Lab Mat Semicond, CH-1015 Lausanne, Switzerland

[2] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-2100 Copenhagen, Denmark

[3] Univ Zaragoza, Inst Nanociencia Aragon ARAID, Zaragoza 50018, Spain

[4] Univ Zaragoza, Dept Fis Mat Condensada, Zaragoza 50018, Spain

[5] IREC, Catalonia Inst Energy Res, St Adria Del Besos 08930, Spain

[6] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[7] ICMAB CSIC, ICREA, E-08193 Bellaterra, Cat, Spain

[8] ICMAB CSIC, Inst Ciencia Mat Barcelona, E-08193 Bellaterra, Cat, Spain

来源：

NANOSCALE | 2012年 / 4卷 / 05期

关键词：

III-V NANOWIRES; EPITAXIAL-GROWTH; INAS NANOWIRES; MOLECULAR-BEAM; HETEROSTRUCTURES; LONG;

D O I：

10.1039/c2nr11799a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III-V nanowire arrays on the silicon platform.

引用

页码：1486 / 1490

页数：5

共 28 条

[1] Epitaxial growth of InP nanowires on germanium [J].

Bakkers, EPAM ;

Van Dam, JA ;

De Franceschi, S ;

Kouwenhoven, LP ;

Kaiser, M ;

Verheijen, M ;

Wondergem, H ;

Van der Sluis, P .

NATURE MATERIALS, 2004, 3 (11) :769-773

[2] The interpretation of HREM images of supported metal catalysts using image simulation:: profile view images [J].

Bernal, S ;

Botana, FJ ;

Calvino, JJ ;

López-Cartes, C ;

Pérez-Omil, JA ;

Rodríguez-Izquierdo, JM .

ULTRAMICROSCOPY, 1998, 72 (3-4) :135-164

[3] Si-InAs heterojunction Esaki tunnel diodes with high current densities [J].

Bjork, M. T. ;

Schmid, H. ;

Bessire, C. D. ;

Moselund, K. E. ;

Ghoneim, H. ;

Karg, S. ;

Lortscher, E. ;

Riel, H. .

APPLIED PHYSICS LETTERS, 2010, 97 (16)

[4] Energy-Conversion Properties of Vapor-Liquid-Solid-Grown Silicon Wire-Array Photocathodes [J].

Boettcher, Shannon W. ;

Spurgeon, Joshua M. ;

Putnam, Morgan C. ;

Warren, Emily L. ;

Turner-Evans, Daniel B. ;

Kelzenberg, Michael D. ;

Maiolo, James R. ;

Atwater, Harry A. ;

Lewis, Nathan S. .

SCIENCE, 2010, 327 (5962) :185-187

[5]

Chen R, 2011, NAT PHOTONICS, V5, P170, DOI [10.1038/nphoton.2010.315, 10.1038/NPHOTON.2010.315]

[6] Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].

Chuang, Linus C. ;

Moewe, Michael ;

Chase, Chris ;

Kobayashi, Nobuhiko P. ;

Chang-Hasnain, Connie ;

Crankshaw, Shanna .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[7] Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates [J].

Cirlin, G. E. ;

Dubrovskii, V. G. ;

Soshnikov, I. P. ;

Sibirev, N. V. ;

Samsonenko, Yu. B. ;

Bouravleuv, A. D. ;

Harmand, J. C. ;

Glas, F. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (04) :112-114

[8] Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy [J].

Colombo, C. ;

Spirkoska, D. ;

Frimmer, M. ;

Abstreiter, G. ;

Morral, A. Fontcuberta I. .

PHYSICAL REVIEW B, 2008, 77 (15)

[9] GaAs Core-Shell Nanowires for Photovoltaic Applications [J].

Czaban, Josef A. ;

Thompson, David A. ;

LaPierre, Ray R. .

NANO LETTERS, 2009, 9 (01) :148-154

[10] Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires [J].

Fontcuberta i Morral, A. ;

Colombo, C. ;

Abstreiter, G. ;

Arbiol, J. ;

Morante, J. R. .

APPLIED PHYSICS LETTERS, 2008, 92 (06)

← 1 2 3 →