Comparison of Low Frequency Noise Characteristics between Channel and Gate-Induced Drain Leakage Currents in nMOSFETs

被引：0
|
作者：
Lee, Ju-Wan [1 ]
Shin, Hyungcheol
Park, Byung-Gook
Lee, Jong-Ho
机构：
[1] Seoul Natl Univ, Elect Engn & Comp Sci, Seoul 151742, South Korea
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
1/f noise; random telegraph noise; gate-induced drain leakage; MOSFETs;
D O I：
10.1063/1.3666670
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low frequency noise including 1/f noise and random telegraph noise (RTN) in gate-induced drain leakage (GIDL) current were fully characterized, and compared with those of channel current in MOSFETs. The GIDL current of sub-100 nm MOSFETs showed lower noise amplitude by similar to 10 times or beyond than channel current at the same current level.
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页数：2
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