Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy

被引：39

作者：

Douglas, E. A. ^{[1
]}

Scheurmann, A. ^{[1
]}

Davies, P. ^{[1
,3
]}

Gila, B. P. ^{[1
]}

Cho, Hyun ^{[1
,4
]}

Craciun, V. ^{[1
]}

Lambers, E. S. ^{[1
]}

Pearton, S. J. ^{[1
]}

Ren, F. ^{[2
]}

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

[4] Pusan Univ, Dept Nanomechatron Engn, Gyeongnam 627702, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; PHOTOEMISSION-SPECTROSCOPY; ROOM-TEMPERATURE; IGZO TFTS; SEMICONDUCTOR; OXYGEN;

D O I：

10.1063/1.3600340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-v) of SiO2/InZnGaO4 (IGZO) heterostructures deposited by low temperature plasma enhanced chemical vapor deposition and sputtering at <50 degrees C, respectively. A value of Delta E-v = 1.43 +/- 0.15 eV was obtained by using the Ga and Zn 2p3 and In 3d3 and 3d5 energy levels as references. Given the experimental bandgap of 3.2 eV for the IGZO, this would indicate a conduction band offset Delta E-C of 4.27 eV in this system. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600340]

引用

页数：3

共 23 条

[1] Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays [J].

Chuang, Chiao-Shun ;

Fung, Tze-Ching ;

Mullins, Barry G. ;

Nomura, Kenji ;

Kamiya, Toshio ;

Shieh, Han-Ping David ;

Hosono, Hideo ;

Kanicki, Jerzy .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :1215-+

[2] Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy [J].

Ding, SA ;

Barman, SR ;

Horn, K ;

Yang, H ;

Yang, B ;

Brandt, O ;

Ploog, K .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2407-2409

[3] Measurement of the band offsets between amorphous LaAlO3 and silicon [J].

Edge, LF ;

Schlom, DG ;

Chambers, SA ;

Cicerrella, E ;

Freeouf, JL ;

Holländer, B ;

Schubert, J .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :726-728

[4] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[5] Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors [J].

Fung, Tze-Ching ;

Chuang, Chiao-Shun ;

Nomura, Kenji ;

Shieh, Han-Ping David ;

Hosono, Hideo ;

Kanicki, Jerzy .

JOURNAL OF INFORMATION DISPLAY, 2008, 9 (04) :21-29

[6] Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors [J].

Heo, Young-Woo ;

Cho, Kwang-Min ;

Sun, Sang-Yun ;

Kim, Se-Yun ;

Lee, Joon-Hyung ;

Kim, Jeong-Joo ;

Norton, D. P. ;

Pearton, S. J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (02)

[7] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[8]

Kanicki J., 1992, MAT DEVICE PHYS, VII, P6

[9] Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy [J].

Kitatani, T ;

Kondow, M ;

Kikawa, T ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9A) :5003-5006

[10] SEMICONDUCTOR CORE-LEVEL TO VALENCE-BAND MAXIMUM BINDING-ENERGY DIFFERENCES - PRECISE DETERMINATION BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

KRAUT, EA ;

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP .

PHYSICAL REVIEW B, 1983, 28 (04) :1965-1977

← 1 2 3 →