Effect of rotating magnetic field on temperature field and flow field of Ga1-xInxSb crystal growth with traveling heater method

被引：4

作者：

Li, Xiang ^{[1
]}

Zhang, Zheng ^{[1
]}

He, Guofang ^{[2
]}

Yang, Donghai ^{[3
]}

Zhang, Weicai ^{[3
]}

Liu, Juncheng ^{[1
,2
]}

机构：

[1] Tianjin Polytech Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China

[2] Taishan Univ, Coll Chem & Chem Engn, Tai An 271000, Shandong, Peoples R China

[3] China Elect Technol Grp Corp, Res Inst 46, Tianjin 300220, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Ga1-xInxSb crystal; convection; heat transfer; rotating magnetic field; traveling heater method; numerical simulation; NUMERICAL-SIMULATION MODEL; SOLID-LIQUID INTERFACE; PHASE DIFFUSION GROWTH; CDZNTE CRYSTALS; THM GROWTH; SEMICONDUCTOR; MICROGRAVITY; SEGREGATION; STEADY;

D O I：

10.35848/1347-4065/ab8921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to optimize the process parameters and shorten the experimental period, Ga1-xInxSb crystal growth with travelling heating method applied rotating magnetic field (RMF) was simulated. The results show that RMF changed the melt convection pattern, firstly, from a single natural convection cell to two forced convection cells coupled each other, which then became independent of each other, then each of which involved into a couple of sub-convective cells as the RMF field intensity increased. Secondly, RMF significantly increased the convection intensity, and the maximum flow velocity increased about 52 times at the initial stage of crystal growth, and about 16 times in the last stage. Thirdly, RMF decreased the axial temperature gradient in the melting zone by 10% above, and decreased the radial temperature gradient about 25% at the same time. And RMF reduced the deflection of crystal growth interface about 21%-23% during the crystal growth.

引用

页数：10

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