Analytical versus numerical analysis of back grading in CIGS solar cells

被引：20

作者：

Decock, Koen ^{[1
]}

Khelifi, Samira ^{[1
]}

Burgelman, Marc ^{[1
]}

机构：

[1] Univ Ghent, Dept Elect & Informat Syst ELIS, B-9000 Ghent, Belgium

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2011年 / 95卷 / 06期

关键词：

CIGS Solar cells; Back grading; FIELDS;

D O I：

10.1016/j.solmat.2010.10.020

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Band gap grading is able to improve the performance of CIGS solar cells. In order to get a better understanding of the parameters influencing the effect of a grading, a closed form analytical expression of the current density is derived. The advantages and drawbacks of this analytical expression with respect to numerical simulation results are assessed. The analytical analysis has limited validity due to restrictions on the absorption characteristic and on the recombination in the space charge layer. Nevertheless it leads to good results, it has the advantage of being faster than numerical simulations and it clarifies the interrelation of the meaningful parameters. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1550 / 1554

页数：5

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