Structural and optical properties of a-SiOx: H thin films deposited by the GJ EBP CVD method

被引：8
作者：
Baranov, Evgeniy [1 ]
Khmel, Sergey [1 ]
Zamchiy, Alexandr [1 ,2 ]
Buyko, Maxim [2 ]
机构：
[1] Kutateladze Inst Thermophys SB RAS, Ac Lavrentiev Ave 1, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Pirogova Str 2, Novosibirsk 630090, Russia
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2016年 / 213卷 / 07期
关键词：
chemical vapor deposition; electron beam plasma; Fourier transform infrared spectroscopy; silicon suboxide; supersonic jets; thin films; AMORPHOUS-SILICON FILMS; HIGH GROWTH-RATE; RAMAN-SPECTROSCOPY; GLOW-DISCHARGE; VAPOR; GAS; JET; QUALITY; MATRIX; CELLS;
D O I：
10.1002/pssa.201532959
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, hydrogenated amorphous silicon suboxide (a-SiOx: H) thin films have been prepared by gas-jet electron beam plasma chemical vapor deposition method (GJ EBP CVD) at a substrate temperature 260 degrees C. The argon to monosilane ratio R = [Ar]/[SiH4] was varied and the influence of the ratio R on the structural and optical properties was investigated. In this method, R affects an oxygen concentration in the film of the silicon suboxide. FTIR measurement showed a decrease of the oxygen concentration from 40.7 to 11% with increasing R. The analysis of FTIR spectra showed the containing a large number polysilane (Si-H-2) n groups that suggest the material column structure. Optical transmission spectra were recorded to investigate the optical properties and thickness of the a-SiOx: H thin films. The maximum of the growth rate is 2 nms(-1) at R = 80. The optical bandgap Eg was derived from Tauc plots. It was found that the increase in the oxygen concentration not only leads to the increase optical bandgap, but also to the decrease the refraction index. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1783 / 1789
页数：7
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