Purely Sidewall InGaN/GaN Core-Shell Nanorod Green Light-Emitting Diodes

被引：0
作者：
Lin, Da-Wei [1 ,2 ]
Wu, Yung-Chi [1 ,2 ]
Kuo, Hao-Chung [1 ,2 ]
Chi, Gou-Chung [1 ,2 ]
Hsu, Lung-Hsing [3 ]
Lan, Yu-Pin [4 ]
Chen, Yang-Fang [5 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
[3] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Tainan, Taiwan
[4] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu, Taiwan
[5] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
2015 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN) | 2015年
关键词：
nanorod; core-shell; selective epitaxial growth; nonpolar; light-emitting diode (LED); MULTIPLE-QUANTUM-WELLS; ARRAYS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel purely sidewall InGaN/GaN core-shell nanorod green light-emitting diode (LED) has been demonstrated by 3D dielectric passivation and selective epitaxial growth technologies. The LED device exhibits unprecedented stable emission wavelength and low efficiency droop.
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页数：2
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