π-Conjugated small molecules enable efficient perovskite growth and charge-extraction for high-performance photovoltaic devices

被引:27
作者
Liu, Hui [1 ]
Liu, Hai-Rui [1 ]
Yang, Feng [1 ]
Yang, Ji-En [1 ]
Song, Jian [1 ]
Li, Meng [2 ,3 ]
Li, Zhe [4 ]
Tsoi, Wing Chung [5 ]
Eze, Martin Chinweokwu [4 ]
Liu, Zhi-Yong [1 ]
Ma, Heng [1 ]
Gao, Min [4 ]
Wang, Zhao-Kui [2 ]
机构
[1] Henan Normal Univ, Coll Phys & Mat Sci, Henan Key Lab Photovolta Mat, Xinxiang 453007, Henan, Peoples R China
[2] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China
[3] Helmholtz Zentrum Berlin Mat & Energie, Lab Adv Optoelect Mat, Kekulestr 5, D-12489 Berlin, Germany
[4] Cardiff Univ, Sch Engn, Cardiff CF24 3AA, Wales
[5] Swansea Univ Bay Campus, Coll Engn, Fabian Way, Swansea SA1 8EN, W Glam, Wales
基金
英国工程与自然科学研究理事会; 中国国家自然科学基金;
关键词
pi-conjugated molecule; Energy level alignment; Charge extraction; HOLE TRANSPORT MATERIALS; SOLAR-CELLS; RECOMBINATION KINETICS; LAYER; PASSIVATION; MORPHOLOGY;
D O I
10.1016/j.jpowsour.2019.227420
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A pi-conjugated small molecule N,N'-bis(naphthalen-l-yl)-N,N'+-bis(phenyl)benzidine (NPB) is introduced into a poly (bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA) hole transport layer in inverted perovskite solar cells (PSCs). The NPB doping induces better perovskite crystal growth owing to a strong pi-pi interaction with PTAA and cation-pi interactions with CH3NH3+ (MA(+)). In addition, NPB doping not only improves the wettability of PTAA and regulates the perovskite crystallization to achieve a larger grain size, but also moves the valence band energy of the hole transport layer closer to the perovskite layer. Consequently, the fabricated PSCs delivered a power conversion efficiency (PCE) of 20.15%, with a short-circuit current density (J(SC)) of 22.60 mA/cm(2) and open-circuit voltage (V-OC) of 1.14 V. This outcome indicates that PTAA:NPB composite materials present great potential for fabricating high-performance PSCs.
引用
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页数:8
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