Planar rose-like ZnO/honeycombed gallium nitride heterojunction prepared by CVD towards enhanced H2 sensing without precious metal modification

被引:6
作者
Zhang, Shaohui [1 ,2 ,5 ]
Liu, Zeng [3 ,4 ]
Zhang, Long [1 ,2 ,5 ]
Chen, Jiafan [1 ]
Zhang, Haifeng [1 ,5 ]
Zhou, Quan [1 ,2 ,5 ]
Nie, Lifan [1 ,5 ]
Dong, Zhaobo [1 ,5 ]
Zhang, Zi'ang [1 ,2 ,5 ]
Wang, Zugang [6 ]
Pan, Gebo [1 ,2 ,5 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Div Interdisciplinary & Comprehens Res & Platform, Suzhou 215123, Peoples R China
[2] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Peoples R China
[5] GBA Res Innovat Inst Nanotechnol, Guangzhou 510700, Guangdong, Peoples R China
[6] Silicon Chem Co, Luxi Chem Grp Co Ltd, Tech Innovat Dept, Liaocheng 252211, Shandong, Peoples R China
关键词
Chemical vapor deposition; Planar rose-like ZnO; PRZ; HGaN heterojunction; No precious metal modification; Deposition distance; GAS-SENSING PERFORMANCE; RANGE H-2 SENSORS; PD THIN-FILMS; ROOM-TEMPERATURE; ZNO NANORODS; HYDROGEN; NANOWIRES; NANOPARTICLES; FABRICATION; NANOSTRUCTURES;
D O I
10.1016/j.vacuum.2021.110312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, through chemical vapor deposition (CVD) method, almost indistinguishable planar rose-like ZnO (PRZ) nanostructures could be prepared on the surface of honeycombed gallium nitride (HGaN) after more than ten deposition tests, and then constructed into PRZ/HGaN heterojunction gas sensor. Subsequent gas behaviors showed that the PRZ/HGaN heterostructure constructed by CVD greatly improved the selectivity and response value (32.5 at 100 ppm) to H2, and realized the improvement of the H2 sensing performance without noble metal modification. Importantly, fast response and recovery time was 47 s and 6 s, respectively. Meanwhile, this sensor presented excellent selectivity and stability. Ultimately, the dynamic monitoring of the sensor was performed for five consecutive months, and the fluctuation ratio of the response value (sensitivity) did not exceed +/- 2%. It could be predicted that the as-obtained sensor was expected to promote the substantial process of industrialization of highly stable metal oxide/HGaN heterojunction sensors.
引用
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页数:9
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