The effect of substrate temperature on P-CVD deposited a-SiGe:H films

被引：4
|
作者：
Rashad, A
Sali, JV
Marathe, BR
Takwale, MG [1 ]
Shaligram, AD
机构：
[1] Univ Pune, Dept Phys, Sch Energy Studies, Pune 411007, Maharashtra, India
[2] Univ Pune, Dept Elect Sci, Pune 411007, Maharashtra, India
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1999年 / 57卷 / 03期
关键词：
a-SiGe : H films; optoelectronic properties; structural properties;
D O I：
10.1016/S0927-0248(98)00147-0
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Undoped a-SiGe : H films were deposited by the RF plasma chemical vapor deposition method. Films deposited at different substrate temperatures ranging between 100 degrees C and 300 degrees C were studied for their optoelectronic and structural properties. Structural defects like vacancies and microvoids were studied by positron lifetime spectroscopy (PLTS) at room temperature. Optoelectronic properties of the films were correlated with the PLTS measurements. The observations show a decrease in the deposition rate with substrate temperature. Good optoelectronic properties and proper structural relaxation have been obtained with a decrease in microvoid concentration. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：209 / 216
页数：8
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