Analytical modeling of metal oxide semiconductor inversion-layer capacitance

被引：3
作者：
Khairurrijal
Miyazaki, S
Takagi, S
Hirose, M
机构：
[1] Japan Sci & Technol Corp, CREST Program, Kawaguchi 3320012, Japan
[2] Hiroshima Univ, Dept Elect Engn, Higashihiroshima 7398527, Japan
[3] Toshiba Co Ltd, R&D Ctr, Adv Semicond Device Res Labs, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 1AB期
关键词：
MOSFET; inversion layer; electron confinement; quantum mechanical inversion-layer capacitance;
D O I：
10.1143/JJAP.38.L30
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron wavefunctions confined in a logarithmic potential well formed in the inversion layer of a metal oxide semiconductor field-effect transistor (MOSFET) are given on the basis of generalized Airy functions. The charge centroid of electrons in the inversion layer has been calculated to derive the quantum mechanical inversion-layer capacitance by taking into account higher subband states. It is shown that the present analytical model can quantitatively explain the experimentally observed inversion-layer capacitance.
引用
收藏
页码：L30 / L32
页数：3
相关论文
共 15 条
[1]   TRANSCONDUCTANCE DEGRADATION IN THIN-OXIDE MOSFETS [J].
BACCARANI, G ;
WORDEMAN, MR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1295-1304
[2]  
Davis Philip J., 1972, HDB MATH FUNCTIONS, P253
[3]  
ERDELYI A, 1956, ASYMPTOTIC EXPANSION, P98
[4]   DETERMINATION OF THE INVERSION-LAYER THICKNESS FROM CAPACITANCE MEASUREMENTS OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH ULTRATHIN OXIDE LAYERS [J].
HARTSTEIN, A ;
ALBERT, NF .
PHYSICAL REVIEW B, 1988, 38 (02) :1235-1240
[5]  
Khairurrijal, 1997, JPN J APPL PHYS 2, V36, pL1541
[6]   Gate capacitance attenuation in MOS devices with thin gate dielectrics [J].
Krisch, KS ;
Bude, JD ;
Manchanda, L .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (11) :521-524
[7]  
LIANG MS, 1986, IEEE T ELECTRON DEV, V33, P409, DOI 10.1109/T-ED.1986.22502
[8]   ANALYSIS OF THE CHANNEL INVERSION LAYER CAPACITANCE IN THE VERY THIN-GATE IGFET [J].
OH, SY ;
CHOI, SG ;
SODINI, CG ;
MOLL, JL .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (07) :236-239
[9]   QUANTUM INVERSION LAYER MOBILITY - NUMERICAL RESULTS [J].
PADMANABHAN, S ;
ROTHWARF, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) :2557-2566
[10]   AN ANALYTIC POLYSILICON DEPLETION EFFECT MODEL FOR MOSFETS [J].
RIOS, R ;
ARORA, ND ;
HUANG, CL .
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) :129-131
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