Optical nonlinearities in bulk GaAs determined by EL2 defect

被引：0
|
作者：
Sudzius, M
Bastiene, L
Svitojus, S
Jarasiunas, K
机构：
[1] Inst. of Mat. Sci. and Appl. Res., Division of Optical Diagnostics, Vilnius University, 2054 Vilnius
来源：
ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期
关键词：
D O I：
10.12693/APhysPolA.90.939
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.
引用
收藏
页码：939 / 942
页数：4
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