Optical nonlinearities in bulk GaAs determined by EL2 defect

被引：0

作者：

Sudzius, M

Bastiene, L

Svitojus, S

Jarasiunas, K

机构：

[1] Inst. of Mat. Sci. and Appl. Res., Division of Optical Diagnostics, Vilnius University, 2054 Vilnius

来源：

ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.90.939

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Time-resolved studies of light diffraction on free carrier phase gratings and light absorption in subnanosecond time domain were carried out in two distinct areas of semi-insulating GaAs with high and low growth-defect density. Numerical analysis was performed in order to reveal the role of EL2 defect in carrier generation and transport. The possibility of transient grating technique to study various defect-governed carrier relaxation processes were demonstrated experimentally.

引用

页码：939 / 942

页数：4

共 6 条

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