Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

被引：52
作者：
He Xiao-Guang [1 ]
Zhao De-Gang [1 ]
Jiang De-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 06期
基金：
中国国家自然科学基金;
关键词：
high electron mobility transistors; GaN; two-dimensional electron gas; polarization effect; MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; INDUCED CHARGE;
D O I：
10.1088/1674-1056/24/6/067301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
    马晓华
    马平
    焦颖
    杨丽媛
    马骥刚
    贺强
    焦莎莎
    张进成
    郝跃
    [J]. Chinese Physics B, 2011, (09) : 385 - 388
  • [22] Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction
    Raymond, A
    Juillaguet, S
    Couzinet, B
    Mezouar, IEL
    KamalSaadi, A
    Khan, MA
    Chen, Q
    Yang, JW
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3): : 211 - 214
  • [23] Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures
    Ma Xiao-Hua
    Ma Ping
    Jiao Ying
    Yang Li-Yuan
    Ma Ji-Gang
    He Qiang
    Jiao Sha-Sha
    Zhang Jin-Cheng
    Hao Yue
    [J]. CHINESE PHYSICS B, 2011, 20 (09)
  • [24] Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures
    Tsubaki, K
    Maeda, N
    Saitoh, T
    Nishida, T
    Kobayashi, N
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4) : 1111 - 1114
  • [25] Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
    Zhang Jin-Cheng
    Zheng Peng-Tian
    Zhang Juan
    Xu Zhi-Hao
    Hao Yue
    [J]. CHINESE PHYSICS B, 2009, 18 (07) : 2998 - 3001
  • [26] Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
    张进成
    郑鹏天
    张娟
    许志豪
    郝跃
    [J]. Chinese Physics B, 2009, (07) : 2998 - 3001
  • [27] Optimization of two-dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
    Douara, Abdelmalek
    Djellouli, Bouaza
    Abid, Hamza
    Rabehi, Abdelaziz
    Ziane, Abderrezzaq
    Mostefaoui, Mohammed
    Ben Toumi, Ahmed
    Dif, Naas
    [J]. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2019, 32 (02)
  • [28] High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
    Dussaigne, Amelie
    Gonschorek, Marcus
    Malinverni, Marco
    Py, Marcel A.
    Martin, Denis
    Mouti, Anas
    Stadelmann, Pierre
    Grandjean, Nicolas
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) : 0610011 - 0610014
  • [29] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    JinFeng Zhang
    Yue Hao
    JinCheng Zhang
    JinYu Ni
    [J]. Science in China Series F: Information Sciences, 2008, 51 : 780 - 789
  • [30] The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
    张金风
    毛维
    张进城
    郝跃
    [J]. Chinese Physics B, 2008, 17 (07) : 2689 - 2695
12345