Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

被引：53
作者：
He Xiao-Guang [1 ]
Zhao De-Gang [1 ]
Jiang De-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 06期
基金：
中国国家自然科学基金;
关键词：
high electron mobility transistors; GaN; two-dimensional electron gas; polarization effect; MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; INDUCED CHARGE;
D O I：
10.1088/1674-1056/24/6/067301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
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页数：5
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共 12 条
[1]   Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures [J].
Ambacher, O ;
Majewski, J ;
Miskys, C ;
Link, A ;
Hermann, M ;
Eickhoff, M ;
Stutzmann, M ;
Bernardini, F ;
Fiorentini, V ;
Tilak, V ;
Schaff, B ;
Eastman, LF .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (13) :3399-3434
[2]   Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].
Ambacher, O ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Wittmer, L ;
Stutzmann, M ;
Rieger, W ;
Hilsenbeck, J .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233
[3]   Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].
Ambacher, O ;
Foutz, B ;
Smart, J ;
Shealy, JR ;
Weimann, NG ;
Chu, K ;
Murphy, M ;
Sierakowski, AJ ;
Schaff, WJ ;
Eastman, LF ;
Dimitrov, R ;
Mitchell, A ;
Stutzmann, M .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344
[4]   Piezoelectric charge densities in AlGaN/GaN HFETs [J].
Asbeck, PM ;
Yu, ET ;
Lau, SS ;
Sullivan, GJ ;
VanHove, J ;
Redwing, J .
ELECTRONICS LETTERS, 1997, 33 (14) :1230-1231
[5]   Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03≤x≤0.23) [J].
Gonschorek, M. ;
Carlin, J. -F. ;
Feltin, E. ;
Py, M. A. ;
Grandjean, N. ;
Darakchieva, V. ;
Monemar, B. ;
Lorenz, M. ;
Ramm, G. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[6]   OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS [J].
KHAN, MA ;
KUZNIA, JN ;
VANHOVE, JM ;
PAN, N ;
CARTER, J .
APPLIED PHYSICS LETTERS, 1992, 60 (24) :3027-3029
[7]   The polarization-induced electron gas in a heterostructure [J].
Ridley, BK ;
Ambacher, O ;
Eastman, LF .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (03) :270-271
[8]   AlGaN/AlN/GaN high-power microwave HEMT [J].
Shen, L ;
Heikman, S ;
Moran, B ;
Coffie, R ;
Zhang, NQ ;
Buttari, D ;
Smorchkova, IP ;
Keller, S ;
DenBaars, SP ;
Mishra, UK .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (10) :457-459
[9]   Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].
Smorchkova, IP ;
Elsass, CR ;
Ibbetson, JP ;
Vetury, R ;
Heying, B ;
Fini, P ;
Haus, E ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526
[10]   AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy [J].
Smorchkova, IP ;
Chen, L ;
Mates, T ;
Shen, L ;
Heikman, S ;
Moran, B ;
Keller, S ;
DenBaars, SP ;
Speck, JS ;
Mishra, UK .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) :5196-5201
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