Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

被引：52
作者：
He Xiao-Guang [1 ]
Zhao De-Gang [1 ]
Jiang De-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 06期
基金：
中国国家自然科学基金;
关键词：
high electron mobility transistors; GaN; two-dimensional electron gas; polarization effect; MOLECULAR-BEAM EPITAXY; PIEZOELECTRIC POLARIZATION; INDUCED CHARGE;
D O I：
10.1088/1674-1056/24/6/067301
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
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页数：5
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