Modulating defect density of NiO hole transport layer via tuning interfacial oxygen stoichiometry in perovskite solar cells

被引：22

作者：

Haider, Muhammad Irfan ^{[1
,2
,3
]}

Fakharuddin, Azhar ^{[4
]}

Ahmed, Safeer ^{[2
]}

Sultan, Muhammad ^{[1
]}

Schmidt-Mende, Lukas ^{[4
]}

机构：

[1] Natl Ctr Phys, Quaid I Azam Univ Campus, Islamabad 44000, Pakistan

[2] Quaid I Azam Univ, Dept Chem, Islamabad 45320, Pakistan

[3] Univ Wah, Dept Chem, Wah 47040, Pakistan

[4] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

来源：

SOLAR ENERGY | 2022年 / 233卷

关键词：

Oxygen stoichiometry; Interfacial defects; Interfacial modification; Stability; Perovskite solar cells; NICKEL-OXIDE; PERFORMANCE; EFFICIENCY; VOLTAGE;

D O I：

10.1016/j.solener.2022.01.023

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The role of oxygen stoichiometry towards the surface properties of NiOx and its influence over perovskite film morphology, band alignment and charge extraction at NiOx/MAPbI(3) interface in inverted perovskite solar cells (PSCs) is analyzed. The oxygen stoichiometry was systematically tuned via thermal treatment of NiOx film in oxygen-rich (o- NiOx) and oxygen-deficient (r- NiOx) atmospheres. These processing conditions impact the defect density and conductivity of NiOx films and thus on the rates of surface recombination, the power conversion efficiency (PCE) and the device stability. We note that the PSCs with r- NiOx show a 20% improvement in PCE in comparison to o- NiOx counterparts. Room-temperature stability measurements for a period of several months demonstrates that the r- NiOx/MAPbI(3) interface prolongs the device stability and retains 95% of its initial PCE, whereas a higher defect density due to the presence of excess oxygen at the o- NiOx/perovskite interface leads to faster degradation.

引用

页码：326 / 336

页数：11

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