LD-Pumped Passively Q-Switched Nd:GGG Laser at 1062 nm with a GaAs Saturable Absorber

被引：9

作者：

Zhang, H. N. ^{[1
]}

Li, P. ^{[1
]}

Wang, Q. P. ^{[1
]}

Chen, X. H. ^{[1
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

来源：

LASER PHYSICS | 2011年 / 21卷 / 11期

基金：

中国国家自然科学基金;

关键词：

CRYSTAL-GROWTH; MU-M; POWER; ND;

D O I：

10.1134/S1054660X11190352

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

we have experimentally studied the passively Q-switched performance of a diode-pumped Nd:GGG laser at 1062 nm with a GaAs saturable absorber, in the experiment when the pumped power was 9.8 W, the maximum CW output power of 5.1 W was obtained. The optical conversion efficiency and the slop efficiency were 52 and 53%, respectively. The threshold was 0.9 W. In the passively Q-switched regime, we get the average output power of 0.93 W. The shortest pulse width and pulse repetition rate were 7 ns and 188 kHz, respectively.

引用

页码：1867 / 1870

页数：4

共 19 条

[11] Passively Q-switched mode-locked Nd3+:LuVO4 laser by LT-GaAs saturable absorber [J].

Li, M. ;

Zhao, S. ;

Li, Y. ;

Yang, K. ;

Li, G. ;

Li, D. ;

An, J. ;

Li, T. ;

Yu, Z. .

LASER PHYSICS LETTERS, 2009, 6 (07) :526-530

[12] High Peak Power Eye-Safe Intracavity Optical Parametric Oscillator Pumped by a Diode-Pumped Passively Q-Switched Nd:GGG Laser [J].

Li, Z-Y ;

Huang, H-T ;

He, J-L ;

Zhang, B-T ;

Xu, J-L .

LASER PHYSICS, 2010, 20 (06) :1302-1306

[13] Diode-pumped passively Q-switched Nd:GAGG laser at 938 nm with V3+:YAG saturable absorber [J].

Liu, S. D. ;

Zhang, B. T. ;

He, J. L. ;

Yang, H. W. ;

Xu, J. L. ;

Liu, F. Q. ;

Yang, J. F. ;

Yang, X. Q. ;

Huang, H. T. .

LASER PHYSICS LETTERS, 2010, 7 (10) :715-718

[14] Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber [J].

Qin, L. J. ;

Tang, D. Y. ;

Xie, G. Q. ;

Luo, H. ;

Dong, C. M. ;

Jia, Z. T. ;

Tao, X. T. .

LASER PHYSICS, 2008, 18 (06) :719-721

[15] Influence of color centers on optical and lasing properties of the gadolinium gallium garnet single crystals doped with Nd3+ ions [J].

Sugak, D ;

Matkovskii, A ;

Durygin, A ;

Suchocki, A ;

Solskii, I ;

Ubizskii, S ;

Kopczynski, K ;

Mierczyk, Z ;

Potera, P .

JOURNAL OF LUMINESCENCE, 1999, 82 (01) :9-15

[16] GaAs photonic crystal slab nanocavities: Growth, fabrication, and quality factor [J].

Sweet, J. ;

Richards, B. C. ;

Olitzky, J. D. ;

Hendrickson, J. ;

Khitrova, G. ;

Gibbs, H. M. ;

Litvinov, D. ;

Gerthsen, D. ;

Hu, D. Z. ;

Schaadt, D. M. ;

Wegener, M. ;

Khankhoje, U. ;

Scherer, A. .

PHOTONICS AND NANOSTRUCTURES-FUNDAMENTALS AND APPLICATIONS, 2010, 8 (01) :1-6

[17] CHARACTERIZATION OF HIGH AVERAGE POWER ND-GGG SLAB LASERS [J].

YOSHIDA, K ;

YOSHIDA, H ;

KATO, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (06) :1188-1192

[18] Crystal growth, optical properties, and CW laser operation at 1.06 μm of Nd:GAGG crystals [J].

Zhang, J. ;

Tao, X. T. ;

Dong, C. M. ;

Jia, Z. T. ;

Yu, H. H. ;

Zhang, Y. Z. ;

Zhi, Y. C. ;

Jiang, M. H. .

LASER PHYSICS LETTERS, 2009, 6 (05) :355-358

[19] Diode-pumped passively Q-switched and mode-locked Nd:GGG laser at 1.3 μm with V3+:YAG saturable absorber [J].

Zuo, C. H. ;

Zhang, B. T. ;

Liu, Y. B. ;

He, J. L. ;

Huang, H. T. ;

Yang, J. F. ;

Xu, J. L. .

LASER PHYSICS, 2010, 20 (08) :1717-1720

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