A Broadband and High Power Frequency TripIer Using 0.5 μm GaN-on-SiC HEMT Technology

被引：0

作者：

Chou, Min-Li ^{[1
]}

Chiang, Yi-Qi ^{[1
]}

Chiu, Hsien-Chin ^{[1
]}

Huang, Fan-Hsiu ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, 259 Wenhua 1st Rd, Taoyuan 33302, Taiwan

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP) | 2015年

关键词：

GaN; SiC; HEMT; tripler; MMIC; high power; broadband;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A frequency tripler for X-band signal generation was implemented in 0.5 mu m GaN-on-SiC HEMT MMIC process. The design with input and output matching network serve as band stop filters were utilized with the characteristic of bandwidth and harmonic suppression. The frequency tripler exhibit a measured conversion loss of 4.5 dB under an input power of 22 dBm with conversion efficiency of 1.0 to 1.8 % from a 15 V dc supply. The output 3-dB bandwidth is around 1.8 GHz ranging from 9.9 to 11.7 GHz, and the saturation output power can be operated to 19.8 dBm with an input power of 26 dBm. The fundamental-and second-harmonic suppression are better than 27.8 dBc and 15 dBc, respectively.

引用

页码：197 / 199

页数：3